MOSFET IRFP250N NPN 30A 200V
73,21 EGP
MOSFET IRFP250N NPN 30A 200V
Description:MOSFET IRFP250N NPN 30A 200V
IRFP250N MOSFET is a high-performance N-channel power MOSFET designed for high-current and medium-voltage power switching, control, and conversion applications. The IRFP250N MOSFET provides superior efficiency, low on-resistance, and fast switching characteristics, making it a perfect choice for power supplies, inverters, DC motor controllers, and other high-efficiency systems.
With a drain current capability of 30A and a drain-source voltage rating of 200V, the IRFP250N MOSFET ensures reliable and stable operation in both continuous and pulsed high-power circuits. Built using advanced HEXFET power MOSFET technology, it combines low conduction loss, high switching speed, and excellent thermal performance, enabling optimal power delivery and heat management.
Encased in a TO-247 package, the IRFP250N MOSFET offers excellent thermal conductivity and mechanical durability, making it suitable for demanding industrial and commercial environments.
Key Features:
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N-Channel Power MOSFET: Optimized for high-current and medium-voltage operation.
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High Current Handling: Supports up to 30A continuous drain current.
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Moderate Voltage Rating: Operates safely up to 200V drain-source voltage.
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Low On-Resistance (RDS(on)): Reduces conduction losses and improves efficiency.
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Fast Switching Speed: Ideal for high-frequency power conversion.
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High Input Impedance: Simplifies gate drive design for low power loss.
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TO-247 Package: Ensures superior heat dissipation and structural robustness.
Applications:
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Power inverters and converters
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DC motor control and battery management systems
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Switched-mode power supplies (SMPS)
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Audio amplifiers and industrial drivers
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Renewable energy systems and automation equipment
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High-efficiency lighting and power regulation systems
Electrical Characteristics (Typical Values):
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | Vdss | 200 | V |
| Continuous Drain Current | Id | 30 | A |
| Gate Threshold Voltage | Vgs(th) | 2.0–4.0 | V |
| On-Resistance | Rds(on) | 0.085 | Ω |
| Power Dissipation | Pd | 190 | W |
| Total Gate Charge | Qg | 160 | nC |
| Operating Temperature | Tj | -55 to +175 | °C |
Advantages:
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High power efficiency with low conduction losses.
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Fast response suitable for high-frequency switching circuits.
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Excellent heat dissipation for stable long-term operation.
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Rugged and reliable design for industrial-grade use.
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Compact and versatile for both professional and DIY electronics.
Summary:
The IRFP250N MOSFET is a durable and efficient N-channel power transistor designed for high-current, high-performance switching and amplification applications. With its 30A current capacity and 200V voltage rating, it delivers excellent energy efficiency, rapid switching, and stable operation across a wide range of environments. Featuring low on-resistance, high input impedance, and superior thermal performance, the IRFP250N MOSFET is widely used in inverters, converters, and power amplifiers. Its TO-247 package ensures exceptional heat transfer and long service life, making the IRFP250N MOSFET a trusted choice for engineers seeking reliability, efficiency, and high power performance.


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