Description

MOSFET IRFP250N NPN 30A 200V


Description:MOSFET IRFP250N NPN 30A 200V

IRFP250N MOSFET is a high-performance N-channel power MOSFET designed for high-current and medium-voltage power switching, control, and conversion applications. The IRFP250N MOSFET provides superior efficiency, low on-resistance, and fast switching characteristics, making it a perfect choice for power supplies, inverters, DC motor controllers, and other high-efficiency systems.

With a drain current capability of 30A and a drain-source voltage rating of 200V, the IRFP250N MOSFET ensures reliable and stable operation in both continuous and pulsed high-power circuits. Built using advanced HEXFET power MOSFET technology, it combines low conduction loss, high switching speed, and excellent thermal performance, enabling optimal power delivery and heat management.

Encased in a TO-247 package, the IRFP250N MOSFET offers excellent thermal conductivity and mechanical durability, making it suitable for demanding industrial and commercial environments.


Key Features:

  • N-Channel Power MOSFET: Optimized for high-current and medium-voltage operation.

  • High Current Handling: Supports up to 30A continuous drain current.

  • Moderate Voltage Rating: Operates safely up to 200V drain-source voltage.

  • Low On-Resistance (RDS(on)): Reduces conduction losses and improves efficiency.

  • Fast Switching Speed: Ideal for high-frequency power conversion.

  • High Input Impedance: Simplifies gate drive design for low power loss.

  • TO-247 Package: Ensures superior heat dissipation and structural robustness.


Applications:

  • Power inverters and converters

  • DC motor control and battery management systems

  • Switched-mode power supplies (SMPS)

  • Audio amplifiers and industrial drivers

  • Renewable energy systems and automation equipment

  • High-efficiency lighting and power regulation systems


Electrical Characteristics (Typical Values):

Parameter Symbol Value Unit
Drain-Source Voltage Vdss 200 V
Continuous Drain Current Id 30 A
Gate Threshold Voltage Vgs(th) 2.0–4.0 V
On-Resistance Rds(on) 0.085 Ω
Power Dissipation Pd 190 W
Total Gate Charge Qg 160 nC
Operating Temperature Tj -55 to +175 °C

Advantages:

  • High power efficiency with low conduction losses.

  • Fast response suitable for high-frequency switching circuits.

  • Excellent heat dissipation for stable long-term operation.

  • Rugged and reliable design for industrial-grade use.

  • Compact and versatile for both professional and DIY electronics.


Summary:

The IRFP250N MOSFET is a durable and efficient N-channel power transistor designed for high-current, high-performance switching and amplification applications. With its 30A current capacity and 200V voltage rating, it delivers excellent energy efficiency, rapid switching, and stable operation across a wide range of environments. Featuring low on-resistance, high input impedance, and superior thermal performance, the IRFP250N MOSFET is widely used in inverters, converters, and power amplifiers. Its TO-247 package ensures exceptional heat transfer and long service life, making the IRFP250N MOSFET a trusted choice for engineers seeking reliability, efficiency, and high power performance.

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