4N60 N-Channel Mosfet 600V 2.6A

4N60 N-Channel Mosfet 600V 2.6A is a high-voltage, high-performance MOSFET designed for applications requiring efficient switching, strong current handling, and reliable power control. This MOSFET is capable of operating at voltages up to 600V and delivering up to 2.6A, making it suitable for a wide variety of power supply circuits, LED drivers, inverter systems, and general-purpose high-voltage designs. Due to its robust structure and dependable electrical characteristics, the 4N60 is considered a new and rare component, especially valued by engineers, technicians, and hobbyists working on power electronics.

The 4N60 N-Channel Mosfet 600V 2.6A features low on-resistance, fast switching capability, and strong avalanche energy performance, enabling it to operate efficiently in demanding environments. Its N-channel structure ensures excellent conduction during switching cycles while maintaining low heat dissipation. This MOSFET is also widely used in SMPS power supplies, battery chargers, motor drivers, and other circuits where stability and durability are essential.

Key Features

• High-voltage MOSFET with 600V drain-source capability.

• Supports continuous drain current up to 2.6A.

• Low RDS(on) for efficient power delivery.

• Fast switching performance suitable for SMPS and inverter circuits.

• New and rare component ideal for replacement and professional applications.

• High durability and stable operation under heavy loads.

• Suitable for both AC and DC power management systems.

Applications

• Switch mode power supplies (SMPS).

• LED drivers and lighting power modules.

• High-voltage DC circuits and converters.

• Battery chargers and power adapters.

• Motor control and inverter systems.

• General-purpose power switching applications.

Advantages

• High efficiency with minimal heat output.

• Strong voltage tolerance for demanding power environments.

• Reliable switching behavior even at high loads.

• Easy to integrate into various electronic circuits.

• Long-term operation due to durable silicon structure.

Data Sheet

Electrical Specifications

• Type: N-Channel MOSFET

• Drain-Source Voltage (VDS): 600V

• Continuous Drain Current (ID): 2.6A

• Gate Threshold Voltage: Typically low for easy drive

• RDS(on): Low resistance ensuring efficient switching

• Power Dissipation: Depends on heatsink and PCB layout

• Switching Speed: Fast rise and fall times for SMPS applications

• Avalanche Rated: Yes, supporting high-stress conditions

Package Information

• Package Type: TO-220 or similar (varies by batch)

• Mounting: Through-hole

• Cooling: Optional heatsink recommended for high-power loads

• Pin Configuration: Gate, Drain, Source

Operating Conditions

• Operating Temperature: Wide industrial range

• Storage: Keep in dry, static-free environment

• Recommended Use: Power electronics, high-voltage switching, and SMPS circuits