MOSFET 4N40 NPN 3A 40V
13,31 EGP
MOSFET 4N40 NPN 3A 40V
Description:MOSFET 4N40 NPN 3A 40V
4N40 MOSFET is a high-performance N-channel enhancement mode power transistor designed for high-efficiency switching, control, and amplification in various electronic systems. The 4N40 MOSFET provides outstanding performance with a maximum drain current of 3A and a drain-source voltage of 400V, making it ideal for use in switching power supplies, motor drivers, lighting circuits, and power control systems.
Built using advanced silicon planar technology, the 4N40 MOSFET offers low on-resistance, high input impedance, and fast switching speed, ensuring efficient operation with minimal power loss. Its excellent thermal stability and strong avalanche energy capability make it suitable for both industrial and consumer-grade applications.
Encased in a TO-220 package, the 4N40 MOSFET ensures effective heat dissipation and mechanical strength, providing consistent, reliable performance in high-voltage and medium-current systems.
Key Features:
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N-Channel Enhancement MOSFET: Suitable for switching and amplification applications.
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High Voltage Capability: Withstands up to 400V drain-source voltage.
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Moderate Current Handling: Supports up to 3A continuous current.
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Low RDS(on): Reduces power dissipation and improves efficiency.
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Fast Switching Performance: Ideal for high-frequency control circuits.
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High Input Impedance: Enables easy interfacing with logic-level control signals.
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Rugged TO-220 Package: Provides excellent heat transfer and durability.
Applications:
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Switched-mode power supplies (SMPS)
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DC-DC converters and inverter systems
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Motor control and driver circuits
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Power regulators and energy management systems
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Lighting control (LED drivers and dimmers)
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Industrial automation and electronic power switching
Electrical Characteristics (Typical Values):
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | Vdss | 400 | V |
| Continuous Drain Current | Id | 3 | A |
| Gate Threshold Voltage | Vgs(th) | 2.0–4.0 | V |
| On-Resistance | Rds(on) | 3.5 | Ω |
| Power Dissipation | Pd | 40 | W |
| Total Gate Charge | Qg | 40 | nC |
| Operating Temperature | Tj | -55 to +150 | °C |
Advantages:
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High-efficiency operation with minimal conduction loss.
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Fast switching response suitable for modern electronic circuits.
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Reliable thermal performance for long-term stability.
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Compact and cost-effective for industrial and consumer applications.
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Excellent durability under high voltage and repetitive switching conditions.
Summary:
The 4N40 MOSFET is a robust and efficient N-channel power transistor designed for high-voltage and medium-current applications. With a voltage rating of 400V and a current capability of 3A, it provides excellent energy efficiency, fast switching performance, and superior reliability. Ideal for use in SMPS, inverters, motor control, and lighting systems, the 4N40 MOSFET ensures efficient operation, low heat generation, and long-lasting durability. Its rugged construction and outstanding electrical characteristics make it a trusted choice for engineers and designers seeking reliability and performance in modern power electronic systems.
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