MOSFET IRF9540N PNP 19A 100V
35,94 EGP
MOSFET IRF9540N PNP 19A 100V
Description:MOSFET IRF9540N PNP 19A 100V
IRF9540N MOSFET is a high-performance P-channel power MOSFET designed for efficient low-voltage switching, load control, and amplification applications. The IRF9540N MOSFET combines low on-resistance, high current capability, and fast switching speed, making it ideal for use in DC-DC converters, motor drivers, inverters, and general-purpose power management circuits.
With a drain current of 19A and a drain-source voltage rating of 100V, the IRF9540N MOSFET ensures strong and stable performance in both linear and pulse-driven systems. Built using advanced HEXFET technology, it delivers high efficiency, low conduction losses, and excellent thermal reliability, making it suitable for industrial, automotive, and consumer-grade electronic systems.
Encased in a TO-220 package, the IRF9540N MOSFET provides superior heat dissipation, mechanical durability, and easy mounting, ensuring long-term operation even under heavy electrical and thermal loads.
Key Features:
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P-Channel Power MOSFET: Designed for low-voltage, high-current applications.
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High Current Capability: Supports up to 19A continuous drain current.
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High Voltage Rating: Operates efficiently up to 100V drain-source voltage.
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Low On-Resistance (RDS(on)): Minimizes energy loss and enhances efficiency.
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Fast Switching Speed: Suitable for high-frequency switching circuits.
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High Input Impedance: Reduces gate drive power requirements.
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TO-220 Package: Ensures excellent thermal performance and reliability.
Applications:
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DC motor control and load switching
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Power supply and inverter systems
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Battery protection and energy management circuits
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Audio amplifiers and lighting control
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Automotive and industrial control systems
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Renewable energy and power regulation applications
Electrical Characteristics (Typical Values):
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | Vdss | -100 | V |
| Continuous Drain Current | Id | -19 | A |
| Gate Threshold Voltage | Vgs(th) | -2.0 to -4.0 | V |
| On-Resistance | Rds(on) | 0.117 | Ω |
| Power Dissipation | Pd | 125 | W |
| Total Gate Charge | Qg | 67 | nC |
| Operating Temperature | Tj | -55 to +175 | °C |
Advantages:
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Efficient power control with low conduction loss.
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Fast switching characteristics for high-frequency applications.
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Stable thermal performance under continuous load.
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Durable and reliable for industrial and automotive environments.
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Compact and cost-effective design suitable for high-performance electronics.
Summary:
The IRF9540N MOSFET is a robust and efficient P-channel power transistor built for high-current and medium-voltage control systems. With its 19A current capacity and 100V voltage rating, it provides low RDS(on), fast switching, and superior energy efficiency. Its rugged TO-220 packaging ensures reliable heat dissipation and long-term operation. The IRF9540N MOSFET is ideal for motor control, inverter circuits, DC-DC converters, and power supply systems. It delivers dependable, energy-efficient, and stable performance for both industrial and consumer electronic applications.
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