Transistor BD682 NPN 4A 100V
9,32 EGP
Transistor BD682 NPN 4A 100V
Description:Transistor BD682 NPN 4A 100V
BD682 Transistor is a high-performance NPN Darlington power transistor designed for high-current and medium-voltage applications that require efficient amplification and switching. The BD682 Transistor features a collector current capacity of up to 4A and a collector-emitter voltage rating of 100V, providing excellent performance for power control, audio amplification, and motor drive systems.
This transistor uses Darlington pair technology, which integrates two transistors in one package to achieve very high DC gain and low base drive requirements. The BD682 Transistor ensures superior energy efficiency and reliable operation even under heavy electrical loads. Built using advanced silicon epitaxial technology, it offers low saturation voltage, fast switching speed, and stable thermal performance, making it ideal for industrial and consumer-grade electronics.
Encased in a durable TO-126 or TO-220 package, the BD682 Transistor provides efficient heat dissipation, ensuring consistent and long-lasting operation in high-power circuits.
Key Features:
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NPN Darlington Power Transistor: Combines high gain with efficient power switching.
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High Collector Current: Supports up to 4A continuous current for demanding loads.
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High Voltage Rating: Operates safely up to 100V collector-emitter voltage.
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Very High DC Current Gain (hFE): Reduces base drive requirements.
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Low Saturation Voltage: Minimizes power loss and improves circuit efficiency.
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Integrated Base-Emitter Resistor: Enhances stability and prevents false triggering.
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TO-220 Package: Provides strong thermal management and easy installation.
Applications:
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Audio amplifier output and driver stages
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Motor control and speed regulation systems
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Power supply regulation and switching circuits
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Relay and solenoid driver modules
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Industrial automation and control systems
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Consumer electronics and educational projects
Electrical Characteristics (Typical Values):
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | Vceo | 100 | V |
| Collector Current | Ic | 4 | A |
| Base Current | Ib | 0.5 | A |
| Power Dissipation | Ptot | 40 | W |
| DC Current Gain | hFE | 750 (typical) | – |
| Saturation Voltage | Vce(sat) | 2 | V |
| Transition Frequency | fT | 3 | MHz |
| Operating Temperature | Tj | -65 to +150 | °C |
Advantages:
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High gain and efficient power control for a wide range of circuits.
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Low energy loss and optimized performance under high load.
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Thermally stable for continuous and industrial applications.
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Simplifies circuit design with built-in base-emitter resistor.
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Reliable and durable, ideal for professional and hobbyist use alike.
Summary:
The BD682 Transistor is a powerful and efficient NPN Darlington transistor that delivers excellent performance in amplification and switching applications. With its 4A current handling capability and 100V voltage tolerance, it provides high gain, low saturation voltage, and long-term stability for demanding environments. Designed for use in amplifiers, power supplies, and motor control circuits, the BD682 Transistor guarantees efficient operation, superior reliability, and extended lifespan. Its rugged TO-220 package and strong thermal properties make it a trusted component for engineers and designers seeking consistent, high-quality power control solutions.
