Transistor BD681 NPN 4A 100V
6,66 EGP
Transistor BD681 NPN 4A 100V
Overview:Transistor BD681 NPN 4A 100V
The Transistor BD681 is a high-power NPN Darlington transistor designed for linear and switching applications where high current gain and strong voltage handling are essential. It can handle a collector current up to 4 amperes and a collector-emitter voltage of 100 volts, making it suitable for audio amplifiers, relay drivers, and power control circuits.
Moreover, the Transistor BD681 features an integrated base-emitter resistor and Darlington configuration, providing very high DC current gain and simplifying circuit design.
Consequently, it is widely used in industrial, automotive, and consumer electronics for applications requiring high amplification, efficient switching, and compact design.
Key Features
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Transistor Type: NPN Darlington
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Collector–Emitter Voltage (V<sub>CEO</sub>): 100 V
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Collector–Base Voltage (V<sub>CBO</sub>): 100 V
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Emitter–Base Voltage (V<sub>EBO</sub>): 5 V
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Collector Current (I<sub>C</sub>): 4 A
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Power Dissipation (P<sub>tot</sub>): 40 W
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DC Current Gain (h<sub>FE</sub>): 750 – 7500
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Transition Frequency (f<sub>T</sub>): 3 MHz typical
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Package Type: TO-126 or TO-220 for enhanced heat dissipation
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Integrated Base Resistor: 10 kΩ (typical)
Additionally, the Transistor BD681 uses epitaxial planar technology, ensuring high reliability, low saturation voltage, and fast switching performance. The built-in Darlington pair provides amplification with minimal base current, ideal for low-drive control systems.
Typical Applications
The Transistor BD681 is widely used in:
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Audio amplifier output and driver stages
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Relay, solenoid, and lamp drivers
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Power regulators and DC motor controllers
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Switching and pulse control circuits
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Industrial control and automation systems
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Battery chargers and power supply circuits
Furthermore, due to its high gain and rugged construction, the Transistor BD681 performs exceptionally well in low-frequency and high-load circuits, providing smooth switching and high thermal stability.
Electrical Characteristics (at T<sub>a</sub> = 25 °C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector–Base Voltage | V<sub>CBO</sub> | 100 | V |
| Collector–Emitter Voltage | V<sub>CEO</sub> | 100 | V |
| Emitter–Base Voltage | V<sub>EBO</sub> | 5 | V |
| Collector Current (Continuous) | I<sub>C</sub> | 4 | A |
| Power Dissipation | P<sub>tot</sub> | 40 | W |
| DC Current Gain | h<sub>FE</sub> | 750 – 7500 | — |
| Transition Frequency | f<sub>T</sub> | 3 | MHz |
| Operating Temperature | T<sub>j</sub> | –55 °C → +150 °C | — |
Advantages
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Extremely high current gain (up to 7500) due to Darlington configuration.
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High power capability (4A / 100V) for demanding applications.
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Low saturation voltage improves energy efficiency.
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Integrated base resistor reduces circuit complexity.
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Moreover, the Transistor BD681 offers excellent thermal performance and long-term stability, making it ideal for continuous operation under high load.
Summary
In summary, the Transistor BD681 is a powerful, high-gain NPN Darlington transistor ideal for amplification, regulation, and power switching applications. With its 4A collector current, 100V voltage rating, and integrated resistor, it simplifies design and enhances efficiency in both industrial and audio circuits.
Therefore, the Transistor BD681 is a dependable, high-performance component for engineers and technicians seeking maximum gain, reliability, and heat endurance in their electronic designs.
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