Transistor BU806 PNP 8A 200V
26,62 EGP
Transistor BU806 PNP 8A 200V
Overview:Transistor BU806 PNP 8A 200V
The Transistor BU806 is a high-voltage, high-current PNP bipolar junction transistor (BJT) designed for power switching, horizontal deflection, and audio amplifier applications. It is widely recognized for its robust construction, excellent thermal performance, and fast switching characteristics, making it ideal for circuits that require both high current handling and voltage endurance.
Moreover, the Transistor BU806 operates efficiently under demanding conditions, supporting a collector current of up to 8 amperes and a collector-emitter voltage of 200 volts, ensuring stable and reliable operation in high-stress environments.
Consequently, this transistor is a top choice for industrial, automotive, and television circuits where precision and durability are essential.
Key Features
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Transistor Type: PNP
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Collector–Emitter Voltage (V<sub>CEO</sub>): –200 V
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Collector–Base Voltage (V<sub>CBO</sub>): –250 V
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Emitter–Base Voltage (V<sub>EBO</sub>): –5 V
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Collector Current (I<sub>C</sub>): –8 A
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Power Dissipation (P<sub>tot</sub>): 80 W
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DC Current Gain (h<sub>FE</sub>): 15 – 100
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Package Type: TO-3P or TO-218 for efficient heat transfer
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Transition Frequency (f<sub>T</sub>): 4 MHz typical
Additionally, the Transistor BU806 is manufactured using epitaxial planar technology, providing high reliability and excellent resistance to secondary breakdown. Its low collector-emitter saturation voltage contributes to efficient energy conversion in switching circuits.
Typical Applications
The Transistor BU806 is suitable for:
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Horizontal deflection circuits in CRT displays and televisions
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Audio amplifier output stages requiring high power
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Power regulators and converters
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Industrial and automotive control systems
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Relay and solenoid drivers
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Complementary circuits with NPN transistors like BU807
Furthermore, due to its wide voltage range and high current capacity, it is frequently used in designs demanding reliable power amplification and fast response times.
Electrical Characteristics (at T<sub>a</sub> = 25 °C)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector–Base Voltage | V<sub>CBO</sub> | –250 | V |
| Collector–Emitter Voltage | V<sub>CEO</sub> | –200 | V |
| Emitter–Base Voltage | V<sub>EBO</sub> | –5 | V |
| Collector Current (Continuous) | I<sub>C</sub> | –8 | A |
| Power Dissipation | P<sub>tot</sub> | 80 | W |
| DC Current Gain | h<sub>FE</sub> | 15 – 100 | — |
| Transition Frequency | f<sub>T</sub> | 4 | MHz |
| Operating Temperature | T<sub>j</sub> | –65 °C → +150 °C | — |
Advantages
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Handles high voltage (200V) and large current (8A) simultaneously.
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Low saturation voltage enhances efficiency in switching applications.
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Excellent thermal stability ensures longer operational life.
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Fast response and low distortion, perfect for power amplifiers.
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Moreover, the Transistor BU806 delivers reliable performance even under heavy loads, ensuring system safety and longevity.
Summary
In summary, the Transistor BU806 is a powerful, high-performance PNP transistor built for heavy-duty switching and amplification. With its 8A current capacity, 200V breakdown voltage, and 80W power dissipation, it provides outstanding efficiency, speed, and thermal reliability.
Therefore, whether used in industrial drivers, high-power amplifiers, or CRT deflection circuits, the Transistor BU806 guarantees stable operation, durability, and superior performance in every application.
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