Transistor STP4NA40FI NPN 2.8A 400V
26,62 EGP
Transistor STP4NA40FI NPN 2.8A 400V
Description:Transistor STP4NA40FI NPN 2.8A 400V
STP4NA40FI MOSFET is a high-performance N-channel power transistor designed for high-voltage, low-current switching and control applications. The STP4NA40FI MOSFET provides superior efficiency, low on-resistance, and excellent thermal performance, making it suitable for power supplies, converters, motor drives, and energy management systems.
With a drain current capacity of 2.8A and a drain-source voltage rating of 400V, the STP4NA40FI MOSFET ensures reliable operation under high-voltage conditions. Its fully isolated TO-220FP package enhances safety and thermal insulation, allowing it to operate efficiently without the need for external isolation components. The transistor features fast switching capability, low gate charge, and high energy efficiency, minimizing power losses even in continuous operation.
Built with advanced PowerMESH™ technology from STMicroelectronics, the STP4NA40FI MOSFET offers exceptional ruggedness, avalanche resistance, and reliability — making it ideal for both industrial and consumer electronic systems that demand long-term stability and high performance.
Key Features:
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N-Channel Power MOSFET: Optimized for high-voltage, medium-current applications.
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High Voltage Rating: Operates safely up to 400V drain-source voltage.
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Current Capability: Supports up to 2.8A continuous drain current.
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Low On-Resistance (RDS(on)): Ensures high efficiency and reduced heat generation.
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Fast Switching Speed: Ideal for high-frequency converters and inverters.
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Fully Isolated Package (TO-220FP): Provides enhanced safety and heat dissipation.
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Rugged and Reliable Design: Excellent avalanche energy handling and thermal endurance.
Applications:
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Switch-mode power supplies (SMPS)
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DC-DC converters and inverters
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Lighting and power control systems
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Motor drivers and automation circuits
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Battery chargers and energy-saving devices
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Industrial control and protection circuits
Electrical Characteristics (Typical Values):
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | Vdss | 400 | V |
| Continuous Drain Current | Id | 2.8 | A |
| Gate Threshold Voltage | Vgs(th) | 2.0–4.0 | V |
| On-Resistance | Rds(on) | 1.2 | Ω |
| Power Dissipation | Pd | 35 | W |
| Total Gate Charge | Qg | 23 | nC |
| Operating Temperature | Tj | -55 to +150 | °C |
Advantages:
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High energy efficiency with low conduction and switching losses.
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Fast response time supports high-frequency and dynamic systems.
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Isolated case ensures safety in compact and grounded circuits.
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Thermally stable and durable under heavy-duty operating conditions.
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Compact and reliable for both consumer and industrial electronics.
Summary:
The STP4NA40FI MOSFET is a highly reliable N-channel power MOSFET engineered for high-voltage, medium-current switching and control. With a current capacity of 2.8A and a voltage tolerance of 400V, it provides fast switching, low energy loss, and superior thermal insulation due to its fully isolated package. Ideal for power supplies, converters, and automation circuits, the STP4NA40FI MOSFET combines efficiency, durability, and ease of integration — making it a perfect choice for engineers and designers seeking optimal performance in compact and safe high-voltage electronic systems.


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