MOSFET IRF730 N-Channel 5.5A 400V
26,62 EGP
MOSFET IRF730 N-Channel 5.5A 400V
Description:MOSFET IRF730 N-Channel 5.5A 400V
MOSFET IRF730 NPN 5.5A 400V is a high-voltage N-channel power transistor designed for fast switching and efficient power control in medium to high-voltage applications. The IRF730 MOSFET combines excellent electrical performance, low gate charge, and strong avalanche capability, making it an ideal choice for switching regulators, motor control, and power supply circuits.
With a drain current capacity of 5.5A and a maximum drain-source voltage of 400V, this MOSFET ensures exceptional reliability and performance under demanding electrical conditions. The IRF730 MOSFET is built with advanced silicon technology that provides low RDS(on) resistance and minimal power loss, enhancing overall system efficiency. Its robust TO-220 package ensures efficient heat dissipation, making it suitable for both industrial and consumer applications.
Key Features:
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N-Channel Power MOSFET with 400V drain-source voltage.
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High Drain Current Capability: Handles up to 5.5A continuous current.
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Low RDS(on): Ensures reduced power loss and increased efficiency.
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Fast Switching Speed: Ideal for high-frequency applications.
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Excellent Avalanche Energy Rating: Provides durability under stress conditions.
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High Input Impedance: Allows easy control with logic-level gate signals.
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TO-220 Package: Provides effective thermal performance and mechanical strength.
Applications:
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Switched-mode power supplies (SMPS)
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DC-DC converters and inverter circuits
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Motor drivers and control modules
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High-voltage switching regulators
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Lighting systems and LED drivers
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Power amplifiers and relay drivers
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Industrial and consumer power control systems
Electrical Characteristics (Typical Values):
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | Vdss | 400 | V |
| Continuous Drain Current | Id | 5.5 | A |
| Gate Threshold Voltage | Vgs(th) | 2.0–4.0 | V |
| On-Resistance | Rds(on) | 1.5 | Ω |
| Power Dissipation | Pd | 75 | W |
| Total Gate Charge | Qg | 30 | nC |
| Operating Temperature | Tj | -55 to +150 | °C |
Advantages:
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Provides excellent efficiency with low conduction and switching losses.
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High-voltage capability ensures reliable performance in power circuits.
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Fast and stable switching suitable for modern control applications.
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Robust TO-220 design for easy installation and long service life.
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Works efficiently in industrial, automotive, and electronic systems.
Summary:
The IRF730 MOSFET is a high-voltage, high-efficiency N-channel device designed for modern power applications. With its 400V rating, 5.5A current capability, and low on-resistance, it provides stable, energy-efficient performance in demanding environments. Ideal for SMPS, converters, and industrial automation systems, the IRF730 MOSFET guarantees reliability, durability, and precise control. Whether you’re an engineer, technician, or hobbyist, this component delivers professional-grade results for any power electronics design.


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