Description

MOSFET 3N60 NPN 3A 600V


Description:MOSFET 3N60 NPN 3A 600V

3N60 MOSFET is a high-efficiency N-channel power MOSFET designed for high-voltage and medium-current applications requiring precision, fast switching, and stable performance. The 3N60 MOSFET offers excellent electrical characteristics, making it ideal for use in power supplies, inverters, converters, and motor control systems.

With a drain current of 3A and a drain-source voltage rating of 600V, the 3N60 MOSFET provides robust operation under demanding electrical and thermal conditions. It is manufactured using advanced planar high-voltage MOS technology, ensuring low on-resistance, high input impedance, and superior switching performance. Its fast response and reliable construction make it an ideal choice for both industrial and consumer-grade power applications.

Encased in a TO-220 or TO-252 package, the 3N60 MOSFET combines compactness, excellent thermal conductivity, and long-term mechanical durability, guaranteeing consistent and efficient performance.


Key Features:

  • N-Channel Enhancement MOSFET: Optimized for high-voltage power control.

  • High Voltage Rating: Operates safely up to 600V drain-source voltage.

  • Moderate Current Capacity: Handles up to 3A continuous drain current.

  • Low On-Resistance (RDS(on)): Reduces conduction losses and heat generation.

  • Fast Switching Speed: Ideal for high-frequency converter applications.

  • High Input Impedance: Reduces gate drive power requirements.

  • Thermally Efficient Package: Ensures safe operation and long lifespan.


Applications:

  • Switched Mode Power Supplies (SMPS)

  • LED drivers and inverter circuits

  • DC-DC converters and regulators

  • Motor control and automation systems

  • Lighting ballasts and power controllers

  • Renewable energy and UPS systems


Electrical Characteristics (Typical Values):

Parameter Symbol Value Unit
Drain-Source Voltage Vdss 600 V
Continuous Drain Current Id 3 A
Gate Threshold Voltage Vgs(th) 2.0–4.0 V
On-Resistance Rds(on) 3.0 Ω
Power Dissipation Pd 40 W
Total Gate Charge Qg 25 nC
Operating Temperature Tj -55 to +150 °C

Advantages:

  • High voltage tolerance ensures reliable operation in demanding circuits.

  • Low energy losses improve efficiency and reduce heat output.

  • Fast switching capability supports high-speed operations.

  • Excellent thermal performance extends operational lifespan.

  • Cost-effective and versatile for a wide range of power applications.


Summary:

The 3N60 MOSFET is a reliable and efficient N-channel power transistor engineered for high-voltage and medium-current control applications. With its 3A current capacity and 600V voltage rating, it offers excellent efficiency, fast switching, and stable operation under demanding conditions. The 3N60 MOSFET features low on-resistance, high input impedance, and superior thermal reliability, making it ideal for use in SMPS, motor drivers, and power converters. Whether used in industrial, commercial, or energy-efficient systems, the 3N60 MOSFET provides dependable performance, energy savings, and long-term durability.

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