Description

Transistor 2N4035 PNP 200mA 40V Metal


Overview:Transistor 2N4035 PNP 200mA 40V Metal

The Transistor 2N4035 is a PNP silicon bipolar junction transistor (BJT) designed for low-power amplification and general-purpose switching applications. Housed in a metal TO-18 package, this transistor offers superior thermal conductivity and mechanical durability compared to standard plastic types.
Moreover, the Transistor 2N4035 is well known for its low leakage current, high reliability, and excellent linear response, making it an ideal choice for audio amplifiers, analog circuits, and precision instrumentation.
Consequently, it is widely used by engineers, educators, and repair technicians who need a stable and robust transistor for signal processing and small-signal control.


Key Features

  • Transistor Type: PNP

  • Collector–Emitter Voltage (V<sub>CEO</sub>): –40 V

  • Collector–Base Voltage (V<sub>CBO</sub>): –60 V

  • Emitter–Base Voltage (V<sub>EBO</sub>): –5 V

  • Collector Current (I<sub>C</sub>): –200 mA

  • Power Dissipation (P<sub>tot</sub>): 300 mW

  • DC Current Gain (h<sub>FE</sub>): 40 – 180

  • Package Type: TO-18 Metal Can

  • Transition Frequency (f<sub>T</sub>): 100 MHz typical

In addition, the Transistor 2N4035 offers low saturation voltage, ensuring efficient operation even in compact electronic circuits. The metal enclosure enhances heat dissipation and protects the transistor from environmental stress.


Typical Applications

The Transistor 2N4035 is suitable for:

  • Audio amplifier stages and signal preamplifiers

  • Low-level analog switching

  • Sensor and instrumentation circuits

  • General-purpose low-power control

  • Complementary pair applications (commonly with 2N3053 NPN)

  • Educational and prototyping projects

Furthermore, its high gain stability and low noise output make it a popular choice for precision analog applications, especially where signal clarity and reliability are crucial.


Electrical Characteristics (at T<sub>a</sub> = 25 °C)

Parameter Symbol Value Unit
Collector–Base Voltage V<sub>CBO</sub> –60 V
Collector–Emitter Voltage V<sub>CEO</sub> –40 V
Emitter–Base Voltage V<sub>EBO</sub> –5 V
Collector Current (Continuous) I<sub>C</sub> –200 mA
DC Current Gain h<sub>FE</sub> 40 – 180
Power Dissipation P<sub>tot</sub> 300 mW
Transition Frequency f<sub>T</sub> 100 MHz
Operating Temperature T<sub>j</sub> –65 °C → +200 °C

Advantages

  • Metal TO-18 package ensures excellent heat conduction and durability.

  • Low leakage current for stable and efficient signal amplification.

  • High gain bandwidth makes it ideal for high-frequency circuits.

  • Compact design suitable for tight PCB layouts.

  • Moreover, the Transistor 2N4035 guarantees long-term reliability and consistent performance in both analog and digital systems.


Summary

In summary, the Transistor 2N4035 is a versatile, low-power PNP transistor that offers precision, durability, and high-frequency response in a compact metal TO-18 enclosure. With a collector current of 200 mA and a voltage rating of 40 V, it is perfect for audio, switching, and signal-processing applications.
Therefore, whether you are designing a new circuit or repairing existing equipment, the Transistor 2N4035 provides superior quality and dependable performance for every electronic task.

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