Transistor C2611 NPN 200mA 400V
26,62 EGP
Transistor C2611 NPN 200mA 400V
The Transistor C2611 is a high-voltage NPN transistor engineered for precision, durability, and reliability in advanced electronic applications. With a collector current of 200mA and a collector-emitter voltage rating of 400V, this transistor is designed to handle demanding high-voltage, low-current environments. The Transistor C2611 is ideal for use in amplifiers, switching regulators, and video signal circuits where high voltage stability and low noise are critical. Its excellent gain characteristics, high breakdown voltage, and strong frequency response make it an outstanding choice for professionals and engineers seeking long-term stability and consistent performance.
Key Features
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Type: NPN Silicon High-Voltage Transistor
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Collector Current (Ic): 200mA continuous
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Collector-Emitter Voltage (Vce): 400V
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Collector-Base Voltage (Vcb): 450V
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Emitter-Base Voltage (Veb): 5V
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DC Current Gain (hFE): 40 – 240 (typical)
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Transition Frequency (fT): 50 MHz typical
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Package Type: TO-92 or equivalent compact encapsulation
Advantages
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High collector-emitter voltage (400V) for stable operation in high-voltage circuits.
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Excellent frequency response, ensuring clear and reliable signal amplification.
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Low leakage current, maintaining efficiency even at elevated temperatures.
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Consistent thermal stability and gain across wide voltage and current ranges.
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Compact design suitable for modern, space-constrained circuit boards.
Applications
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Audio Amplifiers: Ensures low noise and smooth signal amplification for professional audio systems.
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Video Circuits: Provides reliable performance in high-voltage video signal processing.
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Switching Circuits: Suitable for precise, low-current, high-voltage switching control.
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Oscillator and Timing Circuits: Supports high-frequency operation with stable transitions.
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Industrial and Power Control Systems: Used in control boards and feedback circuits requiring high reliability.
Electrical Characteristics (Typical Values at 25°C)
| Parameter | Symbol | Test Condition | Value |
|---|---|---|---|
| Collector-Emitter Voltage | Vceo | Ic = 0 | 400V |
| Collector Current | Ic | Continuous | 200mA |
| DC Current Gain | hFE | Vce = 10V, Ic = 10mA | 40–240 |
| Transition Frequency | fT | Vce = 10V, Ic = 10mA | 50 MHz |
| Collector Dissipation | Pc | — | 800 mW |
| Junction Temperature | Tj | — | 150°C max |
Datasheet Summary
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Model: C2611
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Polarity: NPN
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Collector Current (Ic): 200mA
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Collector-Emitter Voltage (Vce): 400V
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Power Dissipation: 800 mW
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Frequency Response: 50 MHz
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Package Type: TO-92
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Complementary Transistor: A1111 (PNP Transistor)
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Operating Temperature: -55°C to +150°C
Conclusion
The Transistor C2611 is a precision-built NPN transistor offering outstanding performance in high-voltage, low-current applications. Its high breakdown voltage, low noise characteristics, and stable current gain make it ideal for amplifiers, video circuits, and power control systems. Designed to perform reliably under harsh electrical and thermal conditions, the Transistor C2611 NPN 200mA 400V ensures efficiency, longevity, and exceptional quality—making it a superior choice for engineers, repair technicians, and designers focused on high-performance electronic solutions.
