Description

Transistor C930 NPN 3mA 10V

The Transistor C930 is a compact and efficient NPN transistor designed for low-current, low-voltage applications that require precision, stability, and fast response. With a collector current of 3mA and a collector-emitter voltage of 10V, this transistor is ideal for use in signal amplification, switching circuits, and small electronic control systems. The Transistor C930 offers exceptional linearity, low noise, and consistent performance, making it suitable for both educational and professional electronic designs.


Key Features

  • Type: NPN Silicon Small Signal Transistor

  • Collector Current (Ic): 3mA continuous

  • Collector-Emitter Voltage (Vce): 10V

  • Collector-Base Voltage (Vcb): 20V

  • Emitter-Base Voltage (Veb): 5V

  • DC Current Gain (hFE): 100 – 600 (depending on current and voltage)

  • Transition Frequency (fT): 150 MHz typical

  • Package Type: TO-92 or SMD version for compact assembly and reliable performance


Advantages

  • Low collector current makes it ideal for low-power signal and control applications.

  • Excellent frequency response (up to 150 MHz), suitable for high-speed switching.

  • Low noise figure, ensuring clean and distortion-free signal amplification.

  • High DC current gain, providing strong amplification even at low voltages.

  • Compact size and efficient thermal stability, ensuring reliable operation over time.


Applications

  • Signal Amplifiers: Perfect for low-power signal amplification in radios and communication devices.

  • Switching Circuits: Operates efficiently in logic control and microcontroller-based circuits.

  • Audio Circuits: Provides low-distortion amplification for audio preamplifier stages.

  • Oscillator Circuits: Works well in waveform generation and frequency control designs.

  • Educational Projects: Excellent component for learning transistor basics and testing small signal designs.


Electrical Characteristics (Typical Values at 25°C)

Parameter Symbol Test Condition Value
Collector-Emitter Voltage Vceo Ic = 0 10V
Collector Current Ic Continuous 3mA
DC Current Gain hFE Vce = 5V, Ic = 1mA 100–600
Transition Frequency fT Vce = 5V, Ic = 2mA 150 MHz
Collector Dissipation Pc 400 mW
Junction Temperature Tj 150°C max

Datasheet Summary

  • Model: C930

  • Polarity: NPN

  • Collector-Emitter Voltage (Vce): 10V

  • Collector Current (Ic): 3mA

  • Power Dissipation: 400 mW

  • Transition Frequency: 150 MHz

  • Package Type: TO-92 / SMD

  • Complementary Transistor: A1015 (PNP Transistor)

  • Operating Temperature Range: -55°C to +150°C


Conclusion

The Transistor C930 is a reliable and efficient NPN transistor that excels in low-current and signal-level applications. Its high gain, low noise, and fast switching response make it a perfect choice for small signal amplifiers, control circuits, and educational projects. With a compact design and stable electrical performance, the Transistor C930 NPN 3mA 10V guarantees precision, durability, and consistent results in a wide variety of electronic devices and training circuits.

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