Description

Transistor C2383 NPN 1A 160V


Overview:Transistor C2383 NPN 1A 160V

The Transistor C2383 is a high-voltage NPN bipolar junction transistor (BJT) designed for audio frequency (AF) amplification, power regulation, and high-speed switching applications. It is capable of handling a collector current up to 1 ampere and a collector-emitter voltage of 160 volts, making it ideal for circuits that require high voltage resistance and moderate power output.
Moreover, the Transistor C2383 offers excellent linearity, low leakage current, and high gain stability, which ensures precise performance in audio, control, and signal processing systems.
Consequently, it is widely used in amplifier driver stages, television circuits, and industrial electronic boards, where reliability and efficiency are essential.


Key Features

  • Transistor Type: NPN

  • Collector–Emitter Voltage (V<sub>CEO</sub>): 160 V

  • Collector–Base Voltage (V<sub>CBO</sub>): 180 V

  • Emitter–Base Voltage (V<sub>EBO</sub>): 5 V

  • Collector Current (I<sub>C</sub>): 1 A

  • Power Dissipation (P<sub>tot</sub>): 900 mW

  • DC Current Gain (h<sub>FE</sub>): 60 – 320

  • Transition Frequency (f<sub>T</sub>): 100 MHz typical

  • Package Type: TO-92L (long-leaded plastic case)

Additionally, the Transistor C2383 provides low collector-emitter saturation voltage, allowing efficient switching with reduced power loss. Its high voltage tolerance and fast response make it suitable for both analog and digital circuits.


Typical Applications

The Transistor C2383 is commonly used in:

  • Audio amplifier driver and output stages

  • Voltage regulator and power supply circuits

  • High-voltage switching and control systems

  • Relay and solenoid drivers

  • TV and display deflection circuits

  • Complementary pair with A1013 (PNP) for push-pull amplifier configurations

Furthermore, its wide operating range and thermal stability make the Transistor C2383 ideal for continuous operation in demanding environments where consistent gain and reliability are required.


Electrical Characteristics (at T<sub>a</sub> = 25 °C)

Parameter Symbol Value Unit
Collector–Base Voltage V<sub>CBO</sub> 180 V
Collector–Emitter Voltage V<sub>CEO</sub> 160 V
Emitter–Base Voltage V<sub>EBO</sub> 5 V
Collector Current (Continuous) I<sub>C</sub> 1 A
Power Dissipation P<sub>tot</sub> 900 mW
DC Current Gain h<sub>FE</sub> 60–320
Transition Frequency f<sub>T</sub> 100 MHz
Operating Temperature T<sub>j</sub> –55 °C → +150 °C

Advantages

  • High voltage capability (160V) suitable for demanding applications.

  • Low saturation voltage enhances efficiency and reduces heating.

  • Fast switching characteristics ideal for pulse and control circuits.

  • Stable gain across a wide range of operating conditions.

  • Moreover, the Transistor C2383 ensures low noise and superior performance in both signal and power circuits, making it a versatile and long-lasting component.


Summary

In summary, the Transistor C2383 is a high-voltage, medium-power NPN transistor designed for audio, switching, and regulator circuits. With a collector current of 1A, voltage rating of 160V, and excellent thermal performance, it guarantees efficiency, reliability, and precision.
Therefore, whether used in amplifiers, industrial control systems, or consumer electronic devices, the Transistor C2383 remains a dependable choice for engineers and technicians who demand consistent quality and electrical stability.

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