A1480 Transistor PNP 300V 0.1A
6,66 EGP
A1480 Transistor PNP 300V 0.1A
High-Voltage A1480 Transistor for Precision Video and Switching
The A1480 Transistor (2SA1480) functions as a high-voltage PNP silicon epitaxial transistor. It specifically serves applications that require high breakdown voltages and low collector capacitance. Engineers consistently select this component for video output stages in monitors and high-voltage switching regulators.
Extreme Voltage Stability and Signal Clarity
Specifically, the A1480 handles a collector-emitter voltage of up to 300V. This high rating makes the device perfect for driving cathode ray tubes (CRT) and other vacuum fluorescent displays. Furthermore, the transistor features a very low collector output capacitance ($C_{ob}$). Consequently, the unit maintains excellent high-frequency characteristics, which prevents signal blurring in video applications. Moreover, the 100mA current rating provides a stable flow for small-signal high-voltage control. Transitioning to this transistor allows designers to manage high-potential rails without risking component breakdown.
Optimized Thermal Design and Applications
Additionally, the A1480 utilizes the TO-126 package style. This design includes a mounting hole for a heat sink, which offers superior thermal management compared to smaller plastic packages. Consequently, the transistor maintains a stable operating temperature during continuous high-voltage operation. Furthermore, the high transition frequency ($f_T$) of 50MHz ensures rapid switching speeds. This speed makes the A1480 a favorite for high-voltage DC-to-DC converters and industrial sensing equipment.
Moreover, technicians frequently install the A1480 in professional laboratory power supplies. Specifically, its robust breakdown characteristics protect the circuit from transient spikes. Furthermore, because it features PNP polarity, it often pairs with its NPN complement, the 2SC3788. This combination allows for the creation of high-speed, high-voltage push-pull stages in specialized medical and scientific instruments. Additionally, the component meets global durability standards, ensuring a long operational life in demanding industrial environments.
Verified Data Sheet (Technical Specifications)
| Feature | Specification |
| Transistor Polarity | PNP |
| Collector-Emitter Voltage ($V_{CEO}$) | -300V |
| Collector-Base Voltage ($V_{CBO}$) | -300V |
| Emitter-Base Voltage ($V_{EBO}$) | -5V |
| Collector Current ($I_C$) | -100mA |
| Collector Power Dissipation ($P_C$) | 1.2W (Without Heat Sink) / 7W (With) |
| DC Current Gain ($h_{FE}$) | 40 to 250 |
| Transition Frequency ($f_T$) | 50 MHz (Typical) |
| Package Type | TO-126 |
| Operating Temperature | -55 to +150 °C |


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