BD176 Transistor PNP 3A 45V
7,33 EGP
High-Current BD176 PNP Transistor for Reliable Driver Stages
The BD176 Transistor functions as a robust PNP Silicon Bipolar Junction Transistor (BJT) specifically designed for medium-power applications. It is part of the popular BD175/BD177/BD179 family of complementary transistors. Engineers and technicians consistently select the BD176 for its impressive 3A current handling and its ability to dissipate significant heat when paired with a heat sink, making it ideal for industrial control and audio output stages.
Robust 3-Ampere Performance and Efficiency
Specifically, the BD176 manages a continuous collector current ($I_C$) of up to 3A. This capacity allows the device to drive demanding loads such as large solenoids, DC motors, and heavy-duty relay coils that would overwhelm standard small-signal components. Furthermore, the transistor handles a collector-emitter voltage ($V_{CEO}$) of up to 45V. This rating provides a safe and stable operating margin for 12V and 24V DC power rails, protecting the circuit against voltage spikes. Moreover, its low saturation voltage ensures high energy efficiency by minimizing power loss during high-speed switching operations. Transitioning to the BD176 ensures that your power management circuit maintains high thermal stability under heavy loads.
Versatile TO-126 Package and Complementary Design
Additionally, the BD176 utilizes the industry-standard TO-126 (SOT-32) package style. This design features a central mounting hole, allowing the transistor to be bolted directly to a heat sink for maximum thermal performance. Specifically, while the device dissipates 1.25W in free air, it can handle up to 30W when properly heat-sinked.
Moreover, technicians frequently install the BD176 in the driver stages of high-fidelity audio amplifiers and linear power supplies. Specifically, its DC current gain ($h_{FE}$) remains linear across a wide current range, ensuring clear signal reproduction. Furthermore, the component is the PNP complement to the BD175 NPN transistor. Using these two together allows for the creation of balanced push-pull amplifier configurations or high-efficiency H-bridge motor controllers. Additionally, its rugged construction ensures a long operational life in both consumer electronics and industrial automation.
Verified Data Sheet (Technical Specifications)
| Feature | Specification |
| Transistor Polarity | PNP |
| Collector-Emitter Voltage ($V_{CEO}$) | -45V |
| Collector-Base Voltage ($V_{CBO}$) | -45V |
| Emitter-Base Voltage ($V_{EBO}$) | -5V |
| Collector Current ($I_C$) | -3.0A |
| Peak Collector Current ($I_{CM}$) | -7.0A |
| Total Power Dissipation ($P_{tot}$) | 1.25W (Free Air) / 30W (with Heat Sink) |
| DC Current Gain ($h_{FE}$) | 40 to 250 (Variant Dependent) |
| Transition Frequency ($f_T$) | 3.0 MHz (Min) |
| Package Type | TO-126 (SOT-32) |


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