Description

Transistor C828 NPN 5mA 30V


Overview:Transistor C828 NPN 5mA 30V

The Transistor C828 is a low-power NPN silicon bipolar junction transistor (BJT) designed for signal amplification, low-current switching, and frequency control applications. It is optimized for small-signal operations, with a collector current of 5mA and a collector-emitter voltage rating of 30V, making it ideal for sensitive analog circuits and audio preamplifiers.
Moreover, the Transistor C828 offers high current gain, low noise levels, and excellent linearity, ensuring accurate signal reproduction and minimal distortion.
Consequently, it is commonly used in radios, communication systems, sensors, and low-current control circuits, where precision, efficiency, and compact design are critical.


Key Features

  • Transistor Type: NPN

  • Collector–Emitter Voltage (V<sub>CEO</sub>): 30 V

  • Collector–Base Voltage (V<sub>CBO</sub>): 35 V

  • Emitter–Base Voltage (V<sub>EBO</sub>): 5 V

  • Collector Current (I<sub>C</sub>): 5 mA

  • Power Dissipation (P<sub>tot</sub>): 250 mW

  • DC Current Gain (h<sub>FE</sub>): 120 – 560

  • Transition Frequency (f<sub>T</sub>): 80 MHz typical

  • Package Type: TO-92

Additionally, the Transistor C828 is manufactured using epitaxial planar construction, which provides superior performance and stable operation under varying temperature and voltage conditions. Its TO-92 package makes it compact and easy to integrate into printed circuit boards (PCBs) and prototype circuits.


Typical Applications

The Transistor C828 is widely used in:

  • Audio preamplifier and tone control circuits

  • Low-level signal amplification systems

  • Oscillator and waveform generation circuits

  • Switching applications for small loads

  • Radio frequency (RF) and intermediate frequency (IF) stages

  • Control and sensor interface modules

Furthermore, due to its low current consumption and wide gain range, the Transistor C828 performs exceptionally well in both analog and digital low-power designs, making it a go-to choice for electronic engineers and hobbyists.


Electrical Characteristics (at T<sub>a</sub> = 25 °C)

Parameter Symbol Value Unit
Collector–Base Voltage V<sub>CBO</sub> 35 V
Collector–Emitter Voltage V<sub>CEO</sub> 30 V
Emitter–Base Voltage V<sub>EBO</sub> 5 V
Collector Current (Continuous) I<sub>C</sub> 5 mA
Power Dissipation P<sub>tot</sub> 250 mW
DC Current Gain h<sub>FE</sub> 120–560
Transition Frequency f<sub>T</sub> 80 MHz
Operating Temperature T<sub>j</sub> –55 °C → +150 °C

Advantages

  • Low power consumption, suitable for battery-operated devices.

  • High current gain ensures efficient small-signal amplification.

  • Low noise characteristics, providing clean and distortion-free signals.

  • Stable performance across wide voltage and temperature ranges.

  • Moreover, the Transistor C828 combines compact design with excellent electrical reliability, making it ideal for precision low-current circuits.


Summary

In summary, the Transistor C828 is a low-noise, high-gain NPN transistor built for signal amplification and small-load switching. With a 5mA collector current, 30V voltage rating, and 80MHz frequency response, it ensures accurate performance and stability in a wide range of electronic applications.
Therefore, whether used in audio amplifiers, oscillators, or radio circuits, the Transistor C828 offers efficiency, precision, and durability, making it a trusted component in both professional and educational electronic projects.

Shipping & Delivery
Reviews (0)
0 reviews
0
0
0
0
0

There are no reviews yet.

Be the first to review “Transistor C828 NPN 5mA 30V”

Your email address will not be published. Required fields are marked *

You have to be logged in to be able to add photos to your review.