BCY79-01 Transistor Silicon PNP 0.2A 60V
10,25 EGP
High-Reliability BCY79-01 PNP Transistor for Industrial Precision
The BCY79-01 Transistor functions as a high-performance PNP Silicon Bipolar Junction Transistor (BJT) housed in a professional, hermetically sealed metal enclosure. This specific variant is engineered for low-noise, small-signal amplification where higher voltage durability is required. Engineers consistently select the BCY79-01 for its exceptional thermal stability and electromagnetic shielding in critical industrial and telecommunications hardware.
Enhanced Voltage Capacity and Signal Purity
Specifically, the BCY79-01 handles a collector-emitter voltage ($V_{CEO}$) of up to 60V. This high rating provides a significant safety margin for 24V and 48V DC power rails, protecting the circuit against unexpected voltage spikes. Furthermore, the transistor maintains a very low noise figure, making it ideal for the input stages of sensitive measuring instruments and professional audio pre-amplifiers. Moreover, its 200mA (0.2A) continuous collector current capability allows it to drive small relays or indicator lamps without losing its precision characteristics. Transitioning to this metal-can component ensures that your signal processing remains accurate even in electrically noisy environments.
Rugged TO-18 Metal Case and Electrical Stability
Additionally, the BCY79-01 utilizes the TO-18 metal-can package style. This robust design offers far superior heat dissipation compared to plastic TO-92 alternatives and acts as a natural shield against Radio Frequency Interference (RFI). Specifically, the high transition frequency ($f_T$) ensures a flat frequency response across a wide bandwidth, which is essential for high-speed switching and wideband amplifiers.
Moreover, technicians frequently install the BCY79-01 in differential amplifier stages. Specifically, its tightly controlled DC current gain ($h_{FE}$) allows for the precise matching required in balanced analog circuits. Furthermore, because it features PNP polarity, it is often paired with NPN counterparts like the BCY59 series to create highly stable complementary signal paths. Additionally, its rugged hermetic seal protects the silicon die from humidity and aging, making it a reliable choice for long-term maintenance of vintage high-end electronics and mission-critical industrial modules.
Verified Data Sheet (Technical Specifications)
| Feature | Specification |
| Transistor Polarity | PNP |
| Collector-Emitter Voltage ($V_{CEO}$) | -60V |
| Collector-Base Voltage ($V_{CBO}$) | -60V |
| Emitter-Base Voltage ($V_{EBO}$) | -5V |
| Collector Current ($I_C$) | -200mA (0.2A) |
| Total Power Dissipation ($P_{tot}$) | 330mW to 390mW |
| DC Current Gain ($h_{FE}$) | 120 to 630 (Variant Dependent) |
| Transition Frequency ($f_T$) | 100 MHz to 200 MHz |
| Noise Figure (NF) | 2.0 dB (Typical) |
| Package Type | TO-18 (Metal Can) |
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