Description

Transistor C1213 NPN 500mA 35V


Description:Transistor C1213 NPN 500mA 35V

C1213 Transistor is a compact and efficient NPN bipolar junction transistor (BJT) designed for low to medium power amplification and high-speed switching applications. The C1213 Transistor offers a collector current capacity of 500mA and a collector-emitter voltage rating of 35V, making it ideal for use in amplifier circuits, signal drivers, and control systems.

Manufactured using advanced silicon epitaxial technology, the C1213 Transistor delivers excellent DC gain, low saturation voltage, and high frequency response. It provides stable operation under varying voltage and temperature conditions, ensuring reliability in both analog and digital circuits. This transistor is widely used in radios, televisions, and low-power electronic devices, where precision and efficiency are crucial.

Encased in a TO-92 package, the C1213 Transistor combines durability with a compact form factor, making it suitable for both professional electronic systems and educational projects.


Key Features:

  • NPN Bipolar Transistor: Optimized for low to medium-power signal amplification.

  • High DC Gain (hFE): Provides consistent and strong current amplification.

  • Moderate Collector Current: Handles up to 500mA continuous current.

  • High Frequency Response: Ideal for switching and RF applications.

  • Low Saturation Voltage: Ensures minimal energy loss during operation.

  • Stable Thermal Characteristics: Maintains performance across temperature variations.

  • Standard TO-92 Package: Easy to install and integrate into compact circuit designs.


Applications:

  • Audio amplifier stages and driver circuits

  • Radio and television signal amplification

  • Switching and control modules

  • LED drivers and voltage regulation circuits

  • Small-signal control and processing circuits

  • Educational and experimental electronics projects


Electrical Characteristics (Typical Values):

Parameter Symbol Value Unit
Collector-Emitter Voltage Vceo 35 V
Collector Current Ic 500 mA
Power Dissipation Ptot 625 mW
DC Current Gain hFE 70–400
Transition Frequency fT 150 MHz
Collector-Base Leakage Current Icb 50 nA
Operating Temperature Tj -55 to +150 °C

Advantages:

  • High efficiency with minimal power loss.

  • Reliable switching performance for digital circuits.

  • Provides excellent signal amplification with low distortion.

  • Compact and economical design suitable for many electronic applications.

  • Long-lasting and thermally stable for continuous operation.


Summary:

The C1213 Transistor is a versatile and reliable NPN transistor built for precision signal amplification and efficient switching. With its 500mA current capacity and 35V voltage rating, it delivers stable and efficient performance across a wide range of low-power applications. Its high DC gain, low saturation voltage, and excellent frequency response make it a preferred choice for designers working with amplifiers, control modules, and communication systems. Whether used in consumer electronics or educational projects, the C1213 Transistor guarantees durability, precision, and dependable operation for modern electronic designs.

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