Description

Transistor C829 NPN 3mA 20V


Description:Transistor C829 NPN 3mA 20V

C829 Transistor is a compact and efficient NPN bipolar junction transistor (BJT) designed for low-power amplification, signal processing, and switching applications. The C829 Transistor provides stable, low-noise operation and precise signal amplification, making it suitable for small electronic devices, radio circuits, and audio applications.

With a collector current of 3mA and a collector-emitter voltage rating of 20V, the C829 Transistor ensures excellent performance in low-power and low-voltage circuits. Moreover, it offers high DC current gain (hFE) and low saturation voltage, which contribute to clear signal transmission and energy-efficient operation. Therefore, it is a preferred component for engineers and hobbyists working on sensitive and compact electronic designs.

Additionally, this transistor is manufactured using epitaxial planar technology, which guarantees superior linearity, stability, and reliability. It provides fast switching capabilities with minimal signal distortion, ensuring high accuracy in analog and digital signal processing. The TO-92 package design allows for easy mounting, compact circuit integration, and effective heat management, even in small-scale projects.


Key Features:

  • NPN Small-Signal Transistor: Ideal for low-current and low-voltage applications.

  • Collector Current: Supports up to 3mA continuous operation.

  • Collector-Emitter Voltage: Operates efficiently up to 20V.

  • High DC Current Gain (hFE): Delivers consistent and stable signal amplification.

  • Low Saturation Voltage: Minimizes power loss and heat output.

  • Low Noise Design: Ensures clear and distortion-free performance.

  • Compact TO-92 Package: Perfect for small and portable circuits.


Applications:

  • Audio preamplifier and signal amplifier circuits

  • Radio and communication systems

  • Sensor interfaces and low-power control circuits

  • Switching and logic-level circuits

  • Educational and DIY electronics projects

  • Analog and digital testing and measurement systems


Electrical Characteristics (Typical Values):

Parameter Symbol Value Unit
Collector-Emitter Voltage Vceo 20 V
Collector Current Ic 3 mA
Power Dissipation Ptot 250 mW
DC Current Gain hFE 100–500
Saturation Voltage Vce(sat) 0.2 V
Transition Frequency fT 100 MHz
Operating Temperature Tj -55 to +150 °C

Advantages:

  • Excellent low-power performance for sensitive circuits.

  • High signal integrity with low distortion.

  • Energy-efficient and stable operation for portable devices.

  • Compact size suitable for modern miniaturized designs.

  • Reliable long-term stability under continuous use.


Summary:

The C829 Transistor is a reliable and versatile NPN small-signal transistor optimized for low-current (3mA) and low-voltage (20V) operation. It provides high gain, low noise, and fast switching speed, making it an excellent choice for audio, communication, and sensor interface circuits.

Furthermore, the C829 Transistor ensures efficient signal amplification, minimal power consumption, and long-lasting stability. Consequently, it is a popular choice among circuit designers, students, and engineers who require a compact, high-performance, and energy-efficient transistor for precision low-power applications.

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