2SB940A transistor PNP 2A 180V
19,97 EGP
High-Voltage 2SB940A Transistor for Power Amplification
The 2SB940A Transistor (often labeled as B940A) is a high-performance silicon PNP epitaxial planar transistor. It specifically targets high-voltage applications such as TV vertical deflection outputs and power amplification stages. This component is highly valued by technicians for its robust breakdown voltage and ease of mounting in professional electronic repairs.
Reliable High-Voltage Performance
Specifically, the 2SB940A handles a collector-emitter voltage ($V_{CEO}$) of up to 180V. This high rating makes the device perfect for driving inductive loads and managing high-potential rails in power supplies. Furthermore, the unit supports a continuous collector current of 2A. Consequently, the transistor maintains stability during heavy-duty operation without sacrificing signal integrity. Moreover, its high transition frequency of 30 MHz ensures rapid response times in switching environments. Transitioning to this original part provides a significant safety margin for circuits prone to voltage fluctuations.
Optimized Thermal Management and Versatility
Additionally, the 2SB940A utilizes the TO-220F “Full-Pack” package style. This specific design features an isolated mounting hole, which allows you to install the transistor directly onto a heat sink with a single screw without needing an extra mica insulator. Consequently, the transistor maintains an optimal operating temperature during sustained 30W power cycles. Furthermore, because it features PNP polarity, it frequently works alongside its NPN complement, the 2SD1264A.
Moreover, technicians frequently install the 2SB940A in audio frequency power amplifiers and industrial control modules. Specifically, its high DC current gain ($h_{FE}$) ensures consistent amplification across varying signal levels. Furthermore, the robust construction guarantees a long operational life in demanding consumer electronics. Additionally, the component meets global industrial standards, ensuring safe integration into high-voltage power management systems.
Verified Data Sheet (Technical Specifications)
| Feature | Specification |
| Transistor Polarity | PNP |
| Collector-Emitter Voltage ($V_{CEO}$) | -180V |
| Collector-Base Voltage ($V_{CBO}$) | -200V |
| Emitter-Base Voltage ($V_{EBO}$) | -6V |
| Collector Current ($I_C$) | -2.0A |
| Peak Collector Current ($I_{CP}$) | -3.0A |
| Collector Power Dissipation ($P_C$) | 30W (at $T_C$ = 25°C) |
| DC Current Gain ($h_{FE}$) | 60 to 240 |
| Transition Frequency ($f_T$) | 30 MHz (Typical) |
| Package Type | TO-220F (Isolated) |
