Ultra-Fast 2N2369 NPN Transistor
The 2N2369 NPN Transistor is a silicon epitaxial planar device designed specifically for high-speed, low-current switching applications. This transistor excels in digital logic circuits where rapid transition times are critical for performance. Moreover, its NPN configuration allows it to handle collector-emitter voltages up to 15V. Consequently, it remains a staple in high-frequency oscillator and pulse generator designs.
High-Frequency Switching Performance
When your circuit requires minimal delay, the 2N2369 NPN Transistor provides an exceptionally low storage time. Specifically, this makes it ideal for saturated switching applications in computers and telecommunications. Furthermore, the TO-18 metal can package ensures excellent thermal stability. Additionally, the device operates efficiently at frequencies reaching several hundred megahertz. Consequently, engineers frequently select this model for fast-triggering pulse applications.
Reliability and Circuit Integration
Specifically, the 2N2369 NPN Transistor integrates seamlessly into existing TTL and DTL logic families. Furthermore, its robust metal case protects the internal silicon junction from electromagnetic interference. Additionally, the low saturation voltage minimizes power dissipation during operation. Therefore, it is highly effective in battery-powered portable electronics. Moreover, the wide operating temperature range ensures consistent performance in both consumer and industrial environments.
Verified Data Sheet
| Feature | Technical Specification |
| Model Number | 2N2369 |
| Transistor Type | NPN |
| Package Style | TO-18 (Metal Can) |
| Collector-Emitter Voltage ($V_{CEO}$) | 15V |
| Collector-Base Voltage ($V_{CBO}$) | 40V |
| Continuous Collector Current ($I_{C}$) | 200mA |
| Transition Frequency ($f_{T}$) | 500MHz (Typical) |
| Total Power Dissipation ($P_{D}$) | 360mW |

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